Sampath Kumar1, Sanjay Kr Singh2, Arti Noor3, D. S. Chauhan4 & B.K. Kaushik5
1J.S.S. Academy of Technical Education, Noida, India
2IPEC, Ghaziabad, INDIA
3Centre for Development of Advance Computing, Noida, India
4 UTU, Dehradun, India
5IIT Roorkee, India
A comparison of different sense amplifiers are presented in consideration of SRAM memories using 250nm and 180nm technology. The sensing delay-time for different capacitance values of the bit line and for different values of power supply results are given by considering worst case process corners and high temperatures. The effect of various design parameters on the different sense amplifiers has been discussed and reported.