COMPARATIVE STUDY OF DIFFERENT SENSE AMPLIFIERS IN SUBMICRON CMOS TECHNOLOGY

COMPARATIVE STUDY OF DIFFERENT SENSE AMPLIFIERS IN SUBMICRON CMOS TECHNOLOGY

Sampath Kumar¹, Sanjay Kr Singh², Arti Noor^3, D. S. Chauhan⁴ & B.K. Kaushik⁵

¹J.S.S. Academy of Technical Education, Noida, India

²IPEC, Ghaziabad, INDIA

³Centre for Development of Advance Computing, Noida, India

⁴ UTU, Dehradun, India

⁵IIT Roorkee, India

Abstract

A comparison of different sense amplifiers are presented in consideration of SRAM memories using 250nm and 180nm technology. The sensing delay-time for different capacitance values of the bit line and for different values of power supply results are given by considering worst case process corners and high temperatures. The effect of various design parameters on the different sense amplifiers has been discussed and reported.